High-Performanc with R
نویسندگان
چکیده
Recently, Molybdenum Disulphide (MoS2) promising candidate for low-power digital appli to monolayer (1L) MoS2, few-layer MoS2 (FL-M due to its higher density of states (DOS). Howeve study of FL-MoS2 field-effect-transistor (FET) paper, we report a high-performance FL-MoS2 FE contact resistance (~0.8 kΩ.μm) that is close to t silicon contacts in CMOS technology. A cor performance and the number of MoS2 layers is e the design of high-performance FL-MoS2 FET found that edge contacts (metal contact to each ed play a key role in the efficient injection of elect MoS2. This is confirmed by experiments as functional theory (DFT) calculations. Moreover MoS2 (5 nm) FET is also demonstrated with saturation and high drive current (24 μA/μ source/drain doping.
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